This book gives a state-of-the-art overview by internationally-recognized researchers of the breakthrough devices architectures required for Future Intelligent Integrated Systems first book in the Pan Stanford Series on Intelligent Nanosystems. Both Advanced Silicon based CMOS Technologies and New Paths to Augmented Silicon CMOS Technologies, appearing in the first section and the second section respectively, feature More Moore, More Than Moore and Beyond type of devices of interest to building Heterogeneous integrated systems. The First section highlights Advanced Silicon based CMOS Technologies with Fully Depleted Planar, Trigate and Nanowire MOSFETs, Schottky source and drains architectures and possible candidates channel materials to be co integrated with Silicon On Insulator such as Ge, III-V and Carbon or isolate silicon channel with Diamond. New Device and Functional architectures are as well reviewed by Tunneling Field Effect Transistors and 3D Monolithic Integration which the alternative materials could possibly use in the future. The way we could Augment Silicon Technologies is illustrated by the co-integration of new types of devices such as Molecular and Resistive, Spintronics based Memories, Smart Sensors using Nano scale features co-integrated with silicon CMOS or above it. 3D integration and Wafer Level Packaging are coming up as well to pack up new functions and products. The challenges to be addressed and possible solutions are described in this book.